Positive image-forming process utilizing glass substrate with oxide film of indium-tin alloy, coated with o-quinonediazide photoresist, with etching of the oxide film in the imagewise exposed areas

摘要

A positive-type photoresist composition is disclosed, which comprises:PP(A) an o-quinonediazide compound;P P(B) an alkali-soluble phenol resin; andPP(C) at least one compound selected from a group consisting of urea compounds, thiourea compounds and arylamine compounds; A positive-type photoresist composition which comprises:PP(A) an o-quinonediazide compound;PP(B) an alkali-soluble phenol resin; and PP(C) at least one compound selected from a group consisting of urea compounds, thiourea compounds, and arylamine compounds represented by general formulae (I), (II) and (III), respectively, ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 each represents a hydrogen atom, an alkyl group, an aryl group, or any two of R.sub.1, R. sub.2, R.sub.3, and R.sub.4 form at least one ring together, ##STR2## wherein R.sub.5, R.sub.6, and R.sub.7 each represents a hydrogen atom, an alkyl group having from 1 to 8 carbon atoms, a hydroxyalkyl group having from 1 to 8 carbon atoms, a phenyl group unsubstituted or substituted with halogen atom(s), or a naphthyl group unsubstituted or substituted with halogen atom(s).