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Preparation of tertiarybutyldimethylantimony and use thereof

机译:叔丁基二甲基锑的制备及其用途

摘要

The new compound tertiarybutyldimethylantimony is prepared by reacting an timony trihalide SbX.sub.3 with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX, treating the resulting product with the methyl Grignard reagent (CH.sub.3)MgX. where X is a halide, and recovering tertiarybutyldimethylantimony from the reaction mixture. The reaction is preferably carried out by a one pot synthesis in a suitable solvent such as diethyl either using approximately one equivalent of ((CH. sub.3).sub.3 C)MgX in relation to the SbX.sub.3 at about -50° C., followed by treatment with approximately two equivalents of (CH.sub.3)MgX in relation to the SbX.sub.3 at about 0° C. The tertiarybutyldimethylantimony is used as a precursor in forming antimony- containing semiconductor material by chemical vapor deposition.
机译:新的化合物叔丁基二甲基锑是通过使三卤化物SbX.sub.3与叔丁基格氏试剂((CH.sub.3).sub.3 C)MgX反应并用甲基格氏试剂(CH.sub。 .3)MgX。其中X是卤化物,并从反应混合物中回收叔丁基二甲基锑。该反应优选通过在合适的溶剂例如二乙基中通过一锅法合成来进行,该方法使用约一当量的((CH 3)3 C)MgX(相对于SbX 3)约在当量下进行。 -50℃,然后在约0℃下相对于SbX 3用约两当量的(CH 3)MgX处理。叔丁基二甲基锑用作形成含锑半导体的前体材料通过化学气相沉积。

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