首页> 外国专利> Method of producing on silicon, of a micropoint emissive cathodes for flat screen of small dimensions, and products obtained.

Method of producing on silicon, of a micropoint emissive cathodes for flat screen of small dimensions, and products obtained.

机译:在硅上生产小尺寸平面屏幕用的微点发射阴极的方法和所得产品。

摘要

The present invention relates to a process for producing on silicon, of a micropoint emissive cathodes, for a flat display screen of small dimensions, as well as the products obtained by this process. & br / & it consists in making the emissive cathodes from a base substrate (1), monolithic silicon which is formed of a thick layer (300 microns or more), or of a fine layer of a few microns, deposited on an insulating substrate (alumina or glass), the silicon layer being "active" in both cases. & br / it concerns the field of the flat display screens based on the physical phenomenon of cathodoluminescence and the emission of electrons by field effect, and can be applied to all the sectors of industrial use of the display screens or display means of small dimensions, for example, sensors of the video cameras, calculators, apparatuses for controlling all types of vehicles, clock and watch, etc, 1 / p
机译:本发明涉及一种在硅上生产用于小尺寸的平面显示屏的微点发射阴极的方法,以及通过该方法获得的产品。 & br /&它包括由基底基板(1),沉积在绝缘基板(氧化铝或玻璃)上的厚硅片(300微米或以上)或几微米细层形成的整体式硅制成发射阴极),在两种情况下硅层都是“活动的”。 & br />它基于阴极发光的物理现象和通过场效应产生的电子发射,涉及平面显示屏的领域,并且可以应用于显示屏或小尺寸显示装置的所有工业应用领域,例如,摄像机的传感器,计算器,用于控制所有类型的车辆的设备,钟表等,<1 / p>

著录项

  • 公开/公告号JPH07506457A

    专利类型

  • 公开/公告日1995-07-13

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19940513853

  • 发明设计人

    申请日1993-12-03

  • 分类号H01J9/02;H01J1/30;H01J31/15;

  • 国家 JP

  • 入库时间 2022-08-22 04:30:52

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