首页> 外国专利> The reaction sintering die silicon nitride join quality sintering body and its production manner null which are superior in resistance metal hot water cast equipped

The reaction sintering die silicon nitride join quality sintering body and its production manner null which are superior in resistance metal hot water cast equipped

机译:反应烧结模具氮化硅结合质量烧结体及其生产方式无效,在电阻金属热水铸造设备中具有优势

摘要

PURPOSE:To obtain a sintered material bonded with silicon nitride having excellent resistance to welding of metallic melt in a low cost by forming a surface layer comprising BN, AlN or a mixture of the both together with a matrix in one body in applying a silicon nitride obtained from a reaction-sintering to a face of a sintering matrix bonded with the silicon nitride of reaction- sintering type to be brought into contact with a melt as binder. CONSTITUTION:A coating agent in which BN, AlN or a mixture of the both is dispersed in a mixing weight ratio to Si of (95:5) to (1:99) is applied onto a face of a pre-molded material of metallic silicon to be brought into contact with a melt and a resultant material is subjected to a reaction-sintering at 1100-1800 deg.C in N2 gas atmosphere to afford the objective sintered material bonded with a silicon nitride of reaction-sintering type having excellent resistance to welding of metallic melt.
机译:用途:通过在涂覆氮化硅的过程中在主体中形成包含BN,AlN或两者的混合物以及基体的表面层,从而以低成本获得与氮化硅结合的烧结材料,并具有极好的抗金属熔体焊接性从反应烧结到与反应烧结类型的氮化硅结合的烧结基体的表面进行反应烧结而得到的产物,使其与作为粘合剂的熔体接触。组成:一种涂层剂,将BN,AlN或两者的混合物以与Si的混合重量比为(95:5)至(1:99)的方式分散在金属的预成型材料的表面上使硅与熔体接触并在氮气气氛中在1100-1800℃下对所得材料进行反应烧结,从而得到与电阻烧结性优异的反应烧结型氮化硅结合的目标烧结材料。焊接金属熔体。

著录项

  • 公开/公告号JPH0712990B2

    专利类型

  • 公开/公告日1995-02-15

    原文格式PDF

  • 申请/专利权人 NIPPON LIGHT METAL CO;

    申请/专利号JP19900016079

  • 发明设计人 IIDA FUSANOSUKE;SAITO TSUTOMU;

    申请日1990-01-29

  • 分类号C04B41/87;

  • 国家 JP

  • 入库时间 2022-08-22 04:26:58

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