The electronic device produced by geometric doping law and the law

摘要

The method and product of laterally defining semiconductor structures using geometry dependent doping. A compound semiconductor substrate (22), for example, InP or GaAs, is formed with a groove (20) in a predetermined direction. One or more epitaxial layers (42, 44, 46) are deposited on both the grooved portion and the plananar portions of the substrate and include both n-type and p-type dopants. The incorporation rates of the dopants into the deposited layers depend upon the crystalline orientation of the planar surface or the side walls of the groove. Thereby, the planar portion (44, 46) may be formed of one conductivity type and the groove (42) with the other. The invention is particularly useful for defining the current confining structure in a semiconductor laser (FIGS. 1 and 4).