PLASMA FOR PREPARING SEMICONDUCTOR, AND METHOD FOR TREATING WORKPIECE BY USING PROCESS REACTION APPARATUS HAVING AND PLASMA IGNITING APPARATUS AND INDUCTION COUPLING APPARATUS

摘要

PURPOSE: To lessen the damage of an integrated circuit on a workpiece by treating plasma by generating plasma by using an ignition electrode and applying electric power to a gas and positioning an antenna coil for coupling energy with the plasma in order to retain the plasma. ;CONSTITUTION: After a chamber 13 is evacuated by a highly vacuum apparatus 28, argon is introduced into the resultant chamber from an argon gas source 29 until the pressure of the chamber reaches 1 mtorr. High frequency power is applied to an ignition electrode 31 through an inductance 32 and a capacitor 33 to generate plasma in the chamber 13. On the other hand, high frequency power from a high frequency generator 38 is supplied to a multi-wound antenna coil to effectively carry out induction coupling of the electric energy with plasma. Plasma treatment for a wafer 17 on a wafer supporting body 19 is carried out using the plasma.;COPYRIGHT: (C)1995,JPO