PRODUCTION OF HARD BORON NITRIDE BY PHOTOIRRADIATION-ASSISTED PLASMA CVD

摘要

PURPOSE: To produce hard boron nitride consisting of a boron nitride crystal grain by chemical vapor deposition method(CVD) without using high temp. and high pressure. ;CONSTITUTION: A gaseous boron source and nitrogen source C is introduced by 0.01-10vol.%, based on a working gas, into the plasma produced by using a working gas A, i.e., argon, helium and hydrogen or their mixture, the active species generated in the plasma is sent onto a substrate 3 kept at 300-1100°C, the active species on the substrate is irradiated with UV 5 to form a hard boron nitride film and the precursor active species necessary for the growth of the film, and the hard boron nitride is deposited on the substrate. UV having 50-400nm laser wavelength, ≥5Hz laser pulse and 5-1000mJ/cm² laser energy is preferably used. The application to the surface coating of a cutting tool, an electronic material, a light emitting diode, etc., are expected.;COPYRIGHT: (C)1994,JPO