首页> 外国专利> PRODUCTION OF KTP SINGLE CRYSTAL AND OPTICAL WAVEGUIDE

PRODUCTION OF KTP SINGLE CRYSTAL AND OPTICAL WAVEGUIDE

机译:KTP单晶和光波导的生产

摘要

PURPOSE: To produce a large-sized KTiOPO4 single crystal useful as a light- modulating element and with the (100) plane developed in a relatively short time and produce an optical waveguide with the single crystal as a substrate. ;CONSTITUTION: A seed crystal of KTiOPO4 is brought into contact with a flux consisting of 45-65mol% K2O, 25-32mol% P2O5 and 10-30mol% (TiO2)2, the flux is cooled to grow the (100) plane of the KTiOPO4 crystal preferentially, and a KTiOPO4 single crystal is produced. A substrate having the (100) plane of the single crystal is formed, the (100) plane of the substrate is brought into contact with a flux contg. a dopant M, potassium, titanium, phosphorus and oxygen to epitaxially grow the single crystal thin film of K1-xMxTiOPO4 (where M is an element or group to make the refractive index of the thin film higher than that of KTiOPO4), and an optical waveguide is produced.;COPYRIGHT: (C)1994,JPO
机译:目的:生产大尺寸的KTiOPO 4 单晶,用作光调制元件,并在较短的时间内形成(100)平面,并生产以单晶为材料的光波导。基质。 ;组成:使KTiOPO 4 的晶种与由45-65mol%K 2 O,25-32mol%P 2 < / Sub> O 5 和10-30mol%(TiO 2 2 ,冷却助焊剂以生长出(100)优先选择KTiOPO 4 晶体,制备出KTiOPO 4 单晶。形成具有单晶的(100)面的基板,使该基板的(100)面与助焊剂接触。掺杂M,钾,钛,磷和氧以外延生长K 1-x M x TiOPO 4 的单晶薄膜(其中M是使薄膜的折射率比KTiOPO 4 的折射率高的元素或基团,并制得了光波导。;版权所有:(C)1994,JPO

著录项

  • 公开/公告号JPH06345596A

    专利类型

  • 公开/公告日1994-12-20

    原文格式PDF

  • 申请/专利权人 HOYA CORP;

    申请/专利号JP19930167440

  • 发明设计人 SATO KOJI;

    申请日1993-06-14

  • 分类号C30B29/22;C30B19/04;C30B29/14;C30B29/32;G02B6/12;

  • 国家 JP

  • 入库时间 2022-08-22 04:22:29

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