Method of providing a silicion dioxide layer on a substrate by means of chemical reaction from the vapour phase at a low pressure (LPCVD)

摘要

A LPCVD-process for Si0₂-layers at a deposition temperature between 420°C and 500°C, using a silane compound in which only one H and one Cl-atom is bonded to the Si-atom yields a very satisfactory uniformity of the layer thickness. An example of such a silane compound is dimethyl monochlorosilane.