BURN-IN ENABLE CIRCUIT AND BURN-IN TEST METHOD OF SEMICONDUCTOR MEMORY DEVICE

摘要

The circuit provides a function for an efficient and reliable burn-in test for detecting the failures of DRAM during the device production process. A voltage detecting circuit detects a high voltage applied to a specific pin beyond the external voltage and generates a burn-in ebable signal. Then, the first and second word lines are enabled according to a low address synchronously inputted with a low address strobe signal(RAS) and the burn-in enable signal. When the specific pin becomes a voltage below the external voltage, the burn-in signal becomes disabled and the first and second word lines are disabled accroding to the burn-in signal.