DOPING CONTROL METHOD FOR PREPARING HIGH QUALITY N TYPE-GAAS SINGLE CRYSTAL BY HORIZONTAL BRIDGMAN

摘要

The dopping method for controlling a high temperature melt-fusion at the high quality n-type GaAs growth by the horizontal bridgman method is characterized by (a) locating a high concentrate silicon (Si)-dopped polycrystal into the rear of the quartz boat, (b) heating and melting the rear of the polycrystal, and (c) melting the rear of the GaAs molten material to its seed, in order. The method effectively controls a high temperature melt-fusing reaction between the quartz boat and the molten material at the GaAs bulk growth.