A method of etching MoSi 2 (molybdenum silicide) using SF 6 (sulfur hexafluoride), HBr (hydrogen bromide) and O 2 (oxygen)

摘要

The present invention seeks to provide a method for selectively etching a substrate (20) having a layer (25) of molybdosilicate silicide with a resist (26) at the top. This substrate 26 is disposed in the etching zone 54,₆(6 fluorinated type) and HBr (hydrogen bromide)-containing process gas are injected into the etching zone 54. Preferably, SF₆: HBr is 1: 10 to 1: 1, and more preferably, the volume ratio of O₂Oxygen is added. MoSi with excellent selectivity and reduced cross-sectional microload_xPlasma is generated in the anchoring zone 54 to produce etch gas from the process gas that etches the layer anisotropically.