Guide for laying ultra-high voltage underground cables

摘要

The present invention provides a method of making a semiconductor device which can enhance contrast by performing a silylation twice with a silicon source of large molecular weight and a silicon of small molecular weight, thus forming a microscopic pattern. The inventive method includes the steps of forming a photoresist film; performing a first silylation on the photoresist film by using a silicon source with a large molecular weight; performing a second silylation on the photoresist film by using a silicon source with a small molecular weight to form a silylation layer on the exposed region; and forming a photoresist pattern by removing the photoresist film's non-exposed region.