首页> 外国专利> Patent application title: METHOD FOR OPENING AIR IN Pneumatic Equipment of Semiconductor Manufacturing Apparatus, Gas Supply Apparatus and Flue Gas Treatment Apparatus

Patent application title: METHOD FOR OPENING AIR IN Pneumatic Equipment of Semiconductor Manufacturing Apparatus, Gas Supply Apparatus and Flue Gas Treatment Apparatus

机译:专利申请标题:半导体制造设备,供气设备和烟道气处理设备的气动设备中的排气方法

摘要

The present invention relates to a method for preventing corrosion of the inner wall of a pneumatic device and adverse effects on the human body when opening the inside of a pneumatic device such as a semiconductor manufacturing apparatus or its peripheral device for performing etching, CVD, The composition is such that an inert gas is introduced into a pneumatic device such as a chamber or a pipe through which an interhalogen compound gas flows, and then the inert gas is introduced into the chamber. Thereafter, a gas having a humidity of more than 1% is introduced into the chamber, The concentration of the interhalogen compound gas in the chamber or the like decreases to such an extent that the inner wall of the chamber or the like is not corroded before introducing the gas having humidity into the chamber or the like and then the gas having a humidity of more than 1% For example, ClF3Gas) is decomposed into a substance having low toxicity such as HF and low adsorption to the inner wall of the chamber, and then the inside of the chambers is opened to the atmosphere, thereby preventing the chamber from being adversely affected by corrosion or the human body.
机译:[0001]本发明涉及一种在打开用于进行蚀刻,CVD的半导体制造装置等的气动设备或其周边设备的内部时,防止气动设备的内壁腐蚀以及对人体的不良影响的方法。其组成是将惰性气体引入到诸如腔室或管道的气动装置中,使卤素间化合物气体流过该气体,然后将惰性气体引入腔室中。之后,将湿度大于1%的气体引入腔室中,腔室等中的卤素间化合物气体的浓度降低至使得腔室等的内壁在之前不被腐蚀的程度。将具有湿度的气体引入腔室等中,然后将具有大于1%的湿度的气体(例如,ClF 3 Gas)分解为毒性低的物质,例如HF和低吸附到腔室的内壁上,然后将腔室的内部向大气敞开,从而防止腔室受到腐蚀或人体的不利影响。

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