Infrared array sensor using planar micro processing technology and manufacturing method

摘要

The present invention relates to an infrared array sensor using a planar micro processing technology and a method for manufacturing the same, comprising: a support having a substrate, a support having both sides in contact with the substrate, and a space portion formed to contact the outside for insulation between the substrate, and the support A sensor part including a plurality of sensors formed in a predetermined region of the substrate, and an etching window formed to remove material between the substrate and the support by infiltrating an etching solution between the substrate and the support in a predetermined portion of the support except for the sensor part. By using the etching window, it eliminates the regenerative layer between the substrate and the support, thereby securing space between the two structures, minimizing heat loss, simplifying the manufacturing process, and shortening the process time, Sensing characteristics have been improved to detect infrared temperature and realize infrared images. It works.