首页> 外国专利> METHOD OF GROWING MONOCRYSTALS OF ZINC OR CADMIUM CHALCOHENIDES, SOLID SOLUTIONS ON THEIR BASE AND APPARATUS FOR PERFORMING THE METHOD

METHOD OF GROWING MONOCRYSTALS OF ZINC OR CADMIUM CHALCOHENIDES, SOLID SOLUTIONS ON THEIR BASE AND APPARATUS FOR PERFORMING THE METHOD

机译:锌或镉的硫化物,基于其的固体溶液的单晶的生长方法及执行该方法的装置

摘要

FIELD: crystal growing equipment. SUBSTANCE: method comprises steps of vacuumizing a crucible with an initial material and with a charge of volatile component; using as the above mentioned charge zinc or cadmium, being placed in a seed chamber; heating the charge up to a boiling temperature and blowing by its vapor the initial material; filling the crucible by an inert gas; melting the initial material, homogenizing the melt with subsequent crystallization. Apparatus for performing the method has the crucible with a cover. An apertured partition is arranged in the crucible for dividing the last to the seed chamber and the chamber for the initial material. The cover is in the form of a tilted sleeve, mounted freely in the crucible. The cover has a motion limiter in its upper portion. On lateral surfaces of the crucible and the cover openings are provided. EFFECT: enhanced efficiency, simplified structure. 2 cl, 2 dwg
机译:领域:晶体生长设备。物质:该方法包括以下步骤:用初始材料和挥发性成分装料将坩埚抽真空;作为锌或镉的上述电荷,将其置于种子室中;将装料加热至沸腾温度并通过其蒸气吹送初始材料;用惰性气体填充坩埚;熔化初始材料,使熔体均匀并随后结晶。用于执行该方法的设备具有带盖的坩埚。有孔的隔板布置在坩埚中,用于将最后的隔板分为种子室和用于初始物料的室。盖子呈倾斜套筒的形式,可自由安装在坩埚中。盖在其上部具有运动限制器。在坩埚和盖的侧面上设有开口。效果:提高效率,简化结构。 2 cl,2 dwg

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