首页>
外国专利>
PROCESS OF MANUFACTURE OF STRUCTURE 'SILICON-SILICON DIOXIDE FILM'
PROCESS OF MANUFACTURE OF STRUCTURE 'SILICON-SILICON DIOXIDE FILM'
展开▼
机译:结构“二氧化硅-二氧化硅薄膜”的制造过程
展开▼
页面导航
摘要
著录项
相似文献
摘要
FIELD: microelectronics. SUBSTANCE: structures "silicon-silicon dioxide film" are machined with the aid of hydrostatic pressure 600-800MPa for the course of (7-9)(7-9)·103 s. Pressure is raised periodically with rate of 5-10 MPa/s and is dropped to atmospheric one with decreasing rate determined by equation v = vo-(n-1)&Dgr;v, where vo=190-205 MPa/s - rate of pressure release after first cycle, &Dgr;v=1-3 MPa/s is change of release rate after each loading cycle, n=1,2,3... ordinal number of due loading cycle. EFFECT: improved continuity of structures, increased output of good articles. 3 dwg, 3 tbl
展开▼
机译:领域:微电子学。物质:在静水压力为600-800MPa的情况下,在(7-9)(7-9)·10 3 Sup> s的过程中加工结构“二氧化硅-二氧化硅膜”。压力以5-10 MPa / s的速率周期性升高,并以等式v = v o Sub>-(n-1)&Dgr; v确定,其中v o Sub> = 190-205 MPa / s-第一个循环后的压力释放率,v = 1-3 MPa / s是每个加载周期后的释放率变化,n = 1,2,3。 ..应有装载周期的序数。效果:改善结构的连续性,增加优质物品的产量。 3桶,3桶
展开▼