Sealed reactor used to produce silicon@ of semiconductor quality

摘要

Sealed reactor comprises a base plate (1) and a container (8) arranged on it to form a reaction chamber suitable to effect a chemical vapour phase deposition process of Si from a gaseous mixt. contg. H2 and a chlorosilane of formula ClnSiH4-n (where n = 1-4) on a number of heated Si elements (7) arranged in the chamber. The reactor has an externally cooled heat exchange element (12) within the chamber to prevent heating of the gas compsn. present in the chambers, without screening the number of heated Si elements (7) from the radiation emitted from the Si elements. Prodn. of Si of semiconductor quality is also claimed.