A process for the preparation of a fast diode and fast diode obtained by this method.

摘要

The present invention relates to a method of modulation of the quantity of a metal such as gold broadcast in a silicon substrate, in which, prior to the diffusion of gold, a diffusion of a dopant such as phosphorus varies within a range 5 to 10 * * * * 1 3 1 and 10 * * * * * * 5 carbon atoms / cm 3, the concentration of phosphorus is increased at the locations where it is desired to increase the concentration of gold.