Bragg reflector laser distributed, wavelength tunable, with selectively activated virtual diffraction gratings.

摘要

This laser comprises a semiconductive guiding layer (4) between two other semiconductor confinement layers (6, 8) of opposite doping. The passive part of the laser comprises sections (SC1, SC2, SC3) each comprising a periodic arrangement (A) spatially modulating the distribution of the carriers or the electric field in the guiding layer when a current is injected into the PN junction formed by the two other layers or that this junction is polarized in reverse. This creates a diffraction grating. Each section has an effective optical index cooperating with the corresponding diffraction grating to lead to a determined Bragg wavelength for that section. BR/ Application to optical telecommunications.