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Low temperature method for synthesizing micrograin tungsten carbide

机译:低温合成微晶碳化钨的方法

摘要

A method for forming monotungsten carbide, comprising heating a solid, non-elemental tungsten-containing material in a flowing atmosphere containing molecular hydrogen and molecular methane for a time sufficient to convert substantially all of the tungsten-containing material to monotungsten carbide, The heating brings the temperature of the tungsten- containing material to a first elevated temperature of from about 520 to about 550° C. and, subsequently, at a rate of from about 3 to about 10° C. per minute, the heating brings the temperature from the first elevated temperature to a second elevated temperature of about 800 to about 900° C. Thereafter the temperature is held at the second elevated temperature for at least about 15 minutes. At least about 50 weight percent of the monotungsten carbide formed is formed while holding the temperature at the second elevated temperature.
机译:一种形成碳化钨的方法,该方法包括在包含分子氢和分子甲烷的流动气氛中加热固体,非元素的固态含钨材料足够的时间,以使基本上所有的含钨材料转化为碳化钨。将含钨材料的温度升至约520至约550°C的第一升高的温度,随后以每分钟约3至约10°C的速率加热使温度从第一升高温度至约800至约900℃的第二升高温度。此后,将温度在第二升高温度下保持至少约15分钟。在将温度保持在第二升高的温度的同时,形成了至少约50重量%的所形成的碳化钨。

著录项

  • 公开/公告号US5372797A

    专利类型

  • 公开/公告日1994-12-13

    原文格式PDF

  • 申请/专利权人 THE DOW CHEMICAL COMPANY;

    申请/专利号US19930050945

  • 发明设计人 STEPHEN D. DUNMEAD;WILLIAM G. MOORE;

    申请日1993-04-21

  • 分类号C01B31/34;

  • 国家 US

  • 入库时间 2022-08-22 04:05:44

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