Non-volatile dynamic random access memory device; a page store device and a page recall device used in the same; and a page store method and a page recall method

摘要

An NVDRAM memory device which performs a recall operation in which non- volatile data stored in memory cell is converted to volatile data in a recall mode, a store operation in which the volatile data stored in the memory cell is converted to the non-volatile data in a store mode, and a read/write operation in which the volatile data stored in the memory cell is read or written in a DRAM mode, includes: a counter circuit for counting the number of the recall or store operations, which generates an inhibit signal in the case where a counted value exceeds a predetermined value and resets the counted value in response to an external reset signal; and an inhibit unit for inhibiting the recall or store operation in response to the inhibit signal given from the counter circuit.