Method for the in situ identification of the sheet resistivity or, respectively, of process parameters of thin, electrically conductive layers manufactured under the influence of a plasma

摘要

A method and apparatus for measuring sheet resistivity of a layer manufactured under the influence of a plasma, wherein a current is generated using two voltage or current sources in a circuit that is composed of a first current branch, a sheet resistivity, and a second current branch. The current includes the parasitic current I.sub.P injected into the layer by the plasma, this having a first and second part which are symmetrically supplied into the two current branches which respectively have an identical resistance overall. The currents I.sub.A and I.sub.B thus actually flowing in the first and second current branch are respectively directly measured, or measured on the basis of the voltage drop-off at known precision resistors. A measured current I.sub.M which is independent of the plasma influence is calculated therefrom by averaging, and the sheet resistivity is calculated from I.sub.M and by measuring the voltage drop-off at the sheet resistivity.