Method of chamber cleaning in MOCVD applications

摘要

The invention is a process for cleaning a chamber after a chemical vapor deposition has been performed therein. A residue formed during the deposition is combined with a reactive species to form a gas containing an organic substance once found in the residue and to form a film on the chamber walls and internal parts. The gas and the film are removed from the chamber. The formation of a polymer byproduct on the chamber walls and other internal parts of the chamber is minimized by the method of the invention.