(57) Abstract Low in order the noise fluorescent perspective forma emission work image device, to possess specified pitch, it includes with the large area photosensor array which has possessed the multiple photosensors which distribution facilities are done and electricity the addressable point thin film transistor (TFT) array of the noise which is joined to the photosensor low with the pattern which is. TFT array multiple includes electric charge containment TFT low, has possessed the change silicon kind of field which is not larger than value of pitch of array of the work image device which the area where as for each of electric charge containment TFT, you display low at the micron unit displays at the micron unit. Among the change silicon fields, the part where there is a lower part of the source electrode and the drain electrode of TFT is larger than less than approximately 150% of the parts of the change silicon field which to the channel area of TFT is. Ratio of the channel length (distance with source electrode and drain electrode which cross channel) of TFT for channel width is under the 20:1, is under the 10:1 usually, as for channel length a te inside the range with approximately 1 millimicron and 4 millimicrons there is. Photosensor array and, includes the intersection field between the address belts, these intersection fields, at that time we have not possessed silicon substantially, because of this, we change to the intersection and the silicon field does not exist.
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