OPTICAL CONTROLLED RESONANT TUNNELING OSCILLATOR AND ITS MANUFACTURING METHOD

摘要

PURPOSE: To achieve an optical controlled resonant tunneling oscillator that is simple and is capable of an ultrahigh-speed signal processing by controlling the frequency of the resonance transmission vibrator according to the intensity of light. CONSTITUTION: In an optically controlled resonant tunneling oscillator, a heavily doped GaAs buffer layer 1, first and second gap layers 2 and 3 and third and fourth gap layers 6 and 7 that play a role of a depletion layer are formed successively in a forward mesa structure. First and second barrier layers 4a and 4b between the second gap layer 3 and the third gap layer 6 are formed in a double barrier quantum- well structure on a semi-insulation GaAs substrate. Then, the vibrator is constituted of a well layer 5, that is formed at the interfaces and a window layer 8 formed at the upper part of the fourth gap layer 7 and is made of a substance with a large band gap, so that the large part of light that is applied to a surface can be absorbed by a depletion layer. Therefore, when light is applied to the surface of the resonant tunneling element, vibration characteristics change due to expressions I and II (Rs: series resistor, Rn: negative resistor of resonant tunneling diode, C: diode capacitance, and Ls: inductance of packaged circuit) and frequency characteristics can be controlled according to the intensity of light.