PURPOSE: To cause a super lattice effect in a carrier by alternately forming layers of different materials and related intermediate layers, by proving a means which is shifted from a given vertical axis laid on a substrate and periodically interrupts a two-dimensional carrier gas. CONSTITUTION: A two-dimensional electronic gas (2DFG) 23 is enclosed in the space between serrations 4 in a route parallel to a given vertical axis 6, so that a quasi-one dimensional carrier gas can be formed. Projections 3 and the serrations 4 work as the means which periodically interrupt several parts of the 2DEG 23 existing in a modulated doped device at both ends of a varying doped structure 2. When the projections 3 exist, in other words, the carrier becomes utilizable and sent to an area in a material having a low band gap and aligned with the lower sections of the projections 3, and the 2DEG 23 is periodically interrupted and causes periodical potential fluctuation in the structure 2. Therefore, the same super lattice effect at that obtained by an alternation of a plurality of this semiconductor material layers having a high band gap and a plurality of thin semiconductor layers having a slow band gap can be obtained.
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