PURPOSE:To enlarge an allowance to an internal noise, etc., without increasing a chip size by providing a MOSFET to equalize a bit line pair and the MOSFET to make a sense amplifier driving signal and a bit line into the same potential. CONSTITUTION:When a sense amplifier pullup signal BH goes to a high level, an N channel sense amplifier driving signal phiN is precharged through an FETQj10 to 1/2VCC. Further, a precharging signal PR goes to the high level, a bit line precharging potential VBL generating circuit 10 is connected to the signal phiN and the potential of the phiN is made equal to the VBL. At this time, the VBL is supplied through the FETQj10 even to a bit wire BLj. Further, the potential of a line BLj also goes to the VBL through an FETQj5. Consequently, in this condition, even when the bit line potential receives the change due to the noise, a bit line potential and a sense amplifier driving signal are made into the same potential by a TrQj10 provided for respective sense amplifiers, and therefore, the too early sense action of the sense amplifier and the sensitivity deterioration can be prevented without increasing a chip size.
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