pata of resist - ningu manner

摘要

PURPOSE:To improve the usage and resolution of general resist by using masks which have different transmission wavelength for an exposed part and an unexposed part. CONSTITUTION:This method consists of a light source 1 which has a wide light emission spectrum, a mask 2, a mask substrate 21 made of synthetic quartz, a mask film 22 formed by adhering materials with transmission wavelength bands on the mask substrate 21 at the unexposed part A and exposed part B, a positive resist film 3, and a wafer 4. Then this mask is used to form lines (a) and spaces (b) on the positive resist film 3. Therefore, the fusion difficulty increases at the unexposed part and the fusibility is increased at the exposed part. Consequently, the resist itself is not improved, so the usage and resolution of the general resist are improved.