METHOD FOR FORMING A VIRTUAL-GROUND FLASH EPROM ARRAY WITH FLOATING GATES THAT ARE SELF ALIGNED TO THE FIELD OXIDE REGIONS OF THE ARRAY WITH A FLOORING GATE SELTALLY ALIGNED IN THE FIELD OXIDE AREA OF THE ARRAY

摘要

A floating gate of a virtual ground flash programmable read only memory (EPROM) cell formed over a portion of a pair of vertically adjacent field oxide regions is formed by using a stacked etch process to define the width of the floating gate and field oxide regions, . As a result, the pitch of the cell in the X direction can be significantly reduced.