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Seamos Input Buffer and Seamos Level Conversion Method

机译:Seamos输入缓冲区和Seamos电平转换方法

摘要

According to the present invention, in a CMOS input buffer for inputting a TTI-level input signal and converting it into an output signal of the SIMOS lever, the control signal has a ground voltage level below the first voltage level of the power supply voltage, and above the first voltage level. The voltage difference is lower than the ground voltage level below the second voltage level of the power supply voltage, and the voltage difference with the power supply voltage decreases gradually as the power supply voltage increases, and the voltage difference with the power supply voltage is always maintained above the second voltage level. And a control signal generation unit for inputting a Ti-Tel level input signal under control of the control signal and generating a CMOS lever output signal. The SiMOS input buffer according to the present invention has the characteristics of resistance to changes in manufacturing process parameters and fluctuations in power supply voltage, improves operation speed, reduces power consumption, and can operate normally even at low power supply voltage. .
机译:根据本发明,在用于输入TTI电平的输入信号并将其转换为SIMOS杠杆的输出信号的CMOS输入缓冲器中,控制信号的接地电压电平低于电源电压的第一电压电平,并高于第一电压电平。该电压差低于电源电压的第二电压电平以下的接地电压电平,并且随着电源电压的增加,与电源电压的电压差逐渐减小,并且与电源电压的电压差始终为保持高于第二电压电平。控制信号产生单元,用于在控制信号的控制下输入Ti-Tel电平的输入信号并产生CMOS杠杆输出信号。根据本发明的SiMOS输入缓冲器具有抵抗制造工艺参数的改变和电源电压的波动的特性,提高了操作速度,降低了功耗,并且即使在低电源电压下也可以正常操作。 。

著录项

  • 公开/公告号KR960009162A

    专利类型

  • 公开/公告日1996-03-22

    原文格式PDF

  • 申请/专利权人 김광호;

    申请/专利号KR19940020800

  • 发明设计人 이희춘;

    申请日1994-08-23

  • 分类号H01L27/08;

  • 国家 KR

  • 入库时间 2022-08-22 03:45:25

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