Integrated microwave silicon component, e.g. as 50 Ohm wideband preamplifier, oscillator or mixer

摘要

The component contains a transistor circuit in which the base of a first transistor (T1) is connected to the circuit input (IN). The second transistor's (T2) base is connected to the first transistor's collector. The second transistor's emitter is connected to a first circuit output (Out-A). The first transistor's collector is connected via a resistor (R5) to a second circuit output (Out-B). The first transistor's emitter is connected via a resistor (R4) to the second transistor's emitter. The base and collector of the first and second transistors are connected via resistors. A lower potential (Ground) is connected to the first transistor's emitter and a higher potential (V+) to the second transistor's collector.