Controlling switch-off of voltage-controlled IGBT power semiconductor switch

摘要

A voltage-controlled IGBT power semiconductor switch (T2) has a reverse diode (D2). By a comparison of the voltage (Uce) across the power semiconductor switch, for a gate-emitter voltage below a threshold value, with a predetermined limit value, it is determined whether the reverse diode is conducting current. When a switch-off command (Sig) is then present for the power semiconductor switch, an auxiliary voltage (UH) is applied to the MOS control input (G) of the power semiconductor switch for a predetermined time.