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manufacturing method for a halbleiterlaser with high output power, wide bandpasscharakteristik and buried, laminar brs structure.
manufacturing method for a halbleiterlaser with high output power, wide bandpasscharakteristik and buried, laminar brs structure.
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机译:具有高输出功率,宽带通带特性和埋藏的层状brs结构的半导体激光器的制造方法。
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摘要
The present invention concerns a method for manufacturing a buried stripe semiconductor laser comprising the steps of depositing by epitaxy at least the heterostructure (51, 52, 53, 54) comprising at least one active material layer (53) on a substrate (50) and then depositing a dielectric mask (55) over the structure thus obtained and etching the latter through the mask (55) to obtain stripes in the active material layer (53) and any layer or layers (54) previously deposited by epitaxy over the active material layer (53), then carrying out impurity ionic implantation in the structure, protecting the active material stripes (53) and any layer or layers (54) that may have been deposited over this material by means of a mask (55) that is not transparent to ionic implantation.
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