Very wide-band amplifier for direct current to microwaves, especially suitable for integrated circuits

摘要

The field of the invention is that of the amplification of very wide band electrical signals, and more precisely from DC to microwave frequencies greater than 6 GHz. …??The invention relates to a DC-microwave very wide band amplifier device, in particular for amplifying signals transmitted at very high throughput over an optical fibre, of the type comprising at least one amplification stage (N) whose active amplification element is a common-source configured field-effect transistor (T1), each of the said amplification stages (N-1, N, N+1) comprising means of simultaneously holding a positive DC voltage bias on the drain (23) of the said transistor (T1) and a negative or zero DC voltage bias on the gate (21) of the said transistor (T1). …??This device can advantageously be made as a monolithic integrated circuit. …??A favoured application of the invention is the amplification of signals transmitted by transmission systems with very high throughput, in particular by monomode optical fibre. …IMAGE…