Reference voltage generator for dynamic specher with random access

摘要

A reference voltage generator can provide RAMs (random access memories) with a reference voltage (generally mid-way between a supply voltage and a common potential), with improved follower characteristics. When the supply voltage and/or the load condition of the RAMs are significantly altered, the reference voltage is rapidly adjusted by dynamic switching FETs, being pulled down or up. Under balanced conditions when essentially no current flows in the switching FETs, overall power consumption is low.