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Elevated emitter for double poly BICMOS devices
Elevated emitter for double poly BICMOS devices
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机译:双多晶硅BICMOS器件的高架发射极
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摘要
A monolithic semiconductor device includes a field effect transistor and a bipolar junction transistor with an elevated emitter structure. An elevation structure raises the BJT emitter above the plane of the base. The elevation structure increases travel distance between a heavily doped base contact region and the emitter and protects against encroachment without increasing the total surface area allocated to the BJT device. A spacer oxide separates the polysilicon base contact and the elevation structure.
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