首页> 外国专利> Mask and wafer diffraction grating alignment system wherein the diffracted light beams return substantially along an incident angle

Mask and wafer diffraction grating alignment system wherein the diffracted light beams return substantially along an incident angle

机译:掩模和晶片衍射光栅对准系统,其中衍射光束基本上沿入射角返回

摘要

The present invention provides a grating-grating interferometric wafer alignment system, sensor and method for microlithography. It includes: (1) an electromagnetic radiation source with collimating optics delivering a collimated beam of a coherent single or multiple discrete wavelengths or in some cases broadband electromagnetic radiation; (2) a detector of the intensity of the collimated return electromagnetic radiation; (3) x- and y-oriented independent linear gratings for the mask-mark; (3) a "checkerboard pattern" grating for the wafer-mark; and (4) software including an algorithm for determining alignment from the return electromagnetic radiation intensity measured as a function of the relative position of the wafer and mask grating, and a means such as a Fourier transform determining phase and amplitude of a known frequency component of the intensity. In one embodiment a laser diode is used and the backscatter from the mask and wafer gratings is returned to the laser diode creating a beat signal used to determine alignment of the mask and wafer. Alignment accuracy is increased and made more tolerant of processing variables such as wafer topography and coatings.
机译:本发明提供了用于微光刻的光栅光栅干涉晶片对准系统,传感器和方法。它包括:(1)具有准直光学器件的电磁辐射源,可发射相干的单个或多个离散波长或在某些情况下为宽带电磁辐射的准直光束; (2)准直返回电磁辐射强度的检测器; (3)用于遮罩标记的x和y方向独立的线性光栅; (3)晶片标记的“棋盘图案”光栅; (4)软件,包括一种算法,该算法用于根据所测量的返回电磁辐射强度来确定对准,该电磁辐射强度是根据晶圆和掩模光栅的相对位置来确定的,以及一种诸如傅立叶变换的装置,用于确定相位和已知频率分量的幅度强度。在一个实施例中,使用激光二极管,并且来自掩模和晶片光栅的反向散射返回到激光二极管,从而产生用于确定掩模和晶片的对准的差拍信号。对准精度得以提高,并更加容忍了诸如晶片形貌和涂层之类的工艺变量。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号