PROCESS OPTIMIZING METHOD IN VAPOR-PHASE DRY ETCHING

摘要

PROBLEM TO BE SOLVED: To provide an etching method and a device for a semiconductor wafer, which is operated easily, has reliability, is operated at high speed, can be predicted and has excellent cost efficiency. ;SOLUTION: A method in which a reactor 10 is designed is provided. The reactor design method contains a stage, where the first plasma etching device 10 with substrates 21 is prepared. The substrate comprises a top face and a film covering the top face, and the film has a film top-face. In the reactor design method, a profile is demarcated in the film through chemical etching to the film top-face, and the determination of etching-rate data from a profile region is contained. A stage, where a reaction-rate constant is extracted from the etching-rate data, and a stage, where a second plasma etching device is designed by using the reaction-rate constant, are also comprised.;COPYRIGHT: (C)1997,JPO