Growth method null of InP crystallizing on Si

摘要

PURPOSE:To obtain a InP epitaxial layer of good crystallinity on a Si substrate, by feeding the clean surface of the substrate with a In chloride followed by phosphine. CONSTITUTION:A Si substrate 14 is set in the upper tier growth chamber 13, being heat-treated at ca. 1,000 deg.C either in a hydrogen gas atmosphere free from group-V matter or in a vacuum to remove the oxides on the surface of said substrate followed by cooling to 350-600 deg.C. Thence, this substrate is transferred to the lower tier growth chamber 11 followed by feeding HCl and In from source boat 12 to make InCl adsorb on the substrate 14. This substrate 14 is then transferred to the upper tier growth chamber 13 again followed by feeding phosphine to grow InP crystal, thus effecting growth of a InP epitaxial layer by repeating this process.