Measuring method of baseplate surface temperature and grain growth method and growth device null of the semiconductor thin film which utilizes that

摘要

PURPOSE:To achieve higher yields with accurate control of a substrate crystal and temperature by determining a reflection spectrum data to measure a temperature of the surface of a substrate collating the data with an existing data of temperature dependency of a band gap of a substrate material. CONSTITUTION:White light emitted from an external white lamp 1 is condensed by a condenser lens 2 and reflected with a half mirror 3 to be condensed with a condenser lens 4, irradiating a substrate 7. Reflected light from the substrate 7 is introduced to a spectroscope 9 through an optical system which comprises the lens 4, the mirror 3 and a condenser lens 8. Light diffracted by the spectroscope 9 is applied to a photo detector 10 to measure a reflection factor for each wavelength, namely, a reflection spectrum instantaneously. A band gap obtained is compared with a data of a computer 11 in which a temperature dependency of the band gap is stored to determine a substrate temperature. The temperature of the substrate thus obtained is shown on a display device 12.