Alignment accuracy survey pattern

摘要

PURPOSE:To improve the accuracy of a pattern for investigating the accuracy of alignment used for measuring the amount of the deviation of the alignment of a photoresist pattern. CONSTITUTION:A first layer insulating film 20 provided on a semiconductor substrate 1, a polycrystalline silicon layer 30 provided on the first layer insulating film 20, a second layer insulating film 40 provided on the polycrystalline silicon layer 30 and a contact hole 6-2 opened in the second layer insulating film 40 are provided. Photoresist 7-2 is patterned at least at a part in such a contact hole 6-2.