Cu metalization manner null of the AlN ceramic material due to the O ion

摘要

PURPOSE:To improve the bonding strength of a Cu layer by radiating O ion from the surface of a Cu layer against an AlN ceramic material while forming a Cu layer on the surface of the ceramic by Cu evaporation. CONSTITUTION:Cu is evaporated upward from an electron beam-heating evaporation source 3 placed at the intermediate part of a vacuum chamber 1 and the evaporated Cu is deposited on an AIN ceramic material placed on a rotary specimen holder 2. At the same time, O ions are radiated upward from the lower bucket-type ion source 4 at a rate of 1X1015 to 1X1017 ions/cm2 and mixed at the surface of the AlN ceramic material to form a mixing layer. Thereafter, Cu evaporation process is exclusively performed to form a metallized layer consisting of a deposited Cu layer having stable bonding strength and a thickness of 5,000 to 10,000Angstrom .