首页> 外国专利> BICMOS ECL-TO-CMOS LEVEL TRANSLATOR AND BUFFER.

BICMOS ECL-TO-CMOS LEVEL TRANSLATOR AND BUFFER.

机译:BICMOS ECL-to-CMOS电平转换器和缓冲。

摘要

An ECL-to-CMOS level translator and BiCMOS buffer are described. The current supplied from the first input PMOS transistor (P1) is the input current to a current mirror comprising the first and second NMOS transistors (N1 and N2). The current mirror controls the current sourcing and sinking capability of the translator. Third and fourth NMOS transistors (N3 and N4) are coupled to the first and second NMOS transistors in the current mirror and function to vary the source-to-body voltage of the first and second NMOS transistors and consequently their gain which results in increased current drive and sinking capability. The BiCMOS differential buffer of the present invention provides a differential output signal on first and second output nodes (115 and 215). It is comprised of first and second cross-coupled buffers (100B and 200B). Cross-coupling the buffers results in improved high-to-low transition times.
机译:描述了ECL-to-CMOS电平转换器和BiCMOS缓冲器。从第一输入PMOS晶体管(P1)提供的电流是到包括第一和第二NMOS晶体管(N1和N2)的电流镜的输入电流。电流镜控制转换器的电流源和吸收能力。第三和第四NMOS晶体管(N3和N4)耦合到电流镜中的第一和第二NMOS晶体管,其作用是改变第一和第二NMOS晶体管的源-体电压,并因此改变其增益,从而导致电流增加驱动和下沉能力。本发明的BiCMOS差分缓冲器在第一和第二输出节点(115和215)上提供差分输出信号。它由第一和第二交叉耦合缓冲器(100B和200B)组成。缓冲器的交叉耦合可改善从高到低的转换时间。

著录项

  • 公开/公告号EP0655177A4

    专利类型

  • 公开/公告日1997-03-26

    原文格式PDF

  • 申请/专利权人 MICROUNITY SYSTEMS ENGINEERING INC.;

    申请/专利号EP19930914239

  • 发明设计人 WONG BAN PAK;

    申请日1993-05-28

  • 分类号H03K19/0944;H03K19/003;H03K19/08;

  • 国家 EP

  • 入库时间 2022-08-22 03:20:29

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