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A full-wave bridge rectifier circuit

机译:全波桥式整流电路

摘要

The present invention relates to a full-wave bridge rectifier circuit having high energy efficiency, wherein the rectifier of the present invention includes two PMOS transistors MP1 and MP2, two NMOS transistors MN1 and MN2, and two high-level comparators COMH1, COMH2) and two low-level comparators (COML1, COML2), and when an AC input below the GND level is applied to the rectifier's input terminal A, the NMOS transistor MN1 is 'turned on' so that the input terminal A goes to the GND level. When the AC input of Vdd level or higher is applied to the input terminal B, the PMOS transistor PN2 is 'turned on' so that the input terminal B becomes the Vdd level, thereby preventing latch-up, and further, according to the present invention. There is no need to consider in particular the breakdown voltage of the device, and it can be manufactured by a device manufacturing process suitable for manufacturing a device having a breakdown voltage of about 10V.
机译:本发明涉及具有高能量效率的全波桥式整流器电路,其中本发明的整流器包括两个PMOS晶体管MP1和MP2,两个NMOS晶体管MN1和MN2以及两个高电平比较器COMH1,COMH2和两个低电平比较器(COML1,COML2),当低于GND电平的交流输入加到整流器的输入端子A时,NMOS晶体管MN1导通,因此输入端子A变为GND电平。当将Vdd电平或更高电平的AC输入施加到输入端子B时,PMOS晶体管PN2被“导通”,使得输入端子B变为Vdd电平,从而防止闭锁,并且进一步,根据本发明发明。不需要特别考虑器件的击穿电压,并且可以通过适合于制造具有约10V的击穿电压的器件的器件制造工艺来制造器件。

著录项

  • 公开/公告号KR970024483A

    专利类型

  • 公开/公告日1997-05-30

    原文格式PDF

  • 申请/专利权人 김광호;

    申请/专利号KR19950035597

  • 发明设计人 백승범;

    申请日1995-10-16

  • 分类号H02M7/217;

  • 国家 KR

  • 入库时间 2022-08-22 03:17:39

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