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A field emission electron gun capable of minimizing non-uniform effects of the ambient electrical potential state of an electron phase emitted from the emitter

机译:能够最小化从发射器发射的电子相的环境电势状态的不均匀影响的场发射电子枪

摘要

An emitter 104 formed on a predetermined portion of the substrate, an insulating film 105 formed on the remaining portion of the substrate, and an emitter having a space between each emitter and the first gate electrode 101 And a second gate electrode formed on the insulating film so as to surround the outer circumferential surface of the first gate electrode having an interval between the outer circumferential surfaces of the first gate electrode and the second gate electrode, In the field emission electron gun including the second gate electrode 102 to which a second voltage smaller than the first voltage is applied, the emitter is formed on the substrate except for the central portion of the substrate. The first gate electrode has an inner circumferential surface which defines a hole 107 exposing a center portion of the insulating film located on the central portion of the substrate. The third gate electrode 106 may be formed on the center portion of the insulating film having a third voltage lower than the first voltage and having a different spacing between the first gate electrode and the inner circumferential surface of the third gate electrode.
机译:形成在基板的预定部分上的发射极104,形成在基板的其余部分上的绝缘膜105,以及在每个发射极与第一栅电极101之间形成有间隔的发射极以及在绝缘膜上形成的第二栅电极在包围第一栅电极的外周表面且第一栅电极和第二栅电极的外周表面之间具有间隔的情况下,在包括第二栅电极102的场发射电子枪中,第二电压较小在施加第一电压之后,除了衬底的中心部分之外,在衬底上形成发射极。第一栅电极具有内周表面,该内周表面限定孔107,该孔107暴露位于基板的中心部分上的绝缘膜的中心部分。第三栅电极106可以形成在具有低于第一电压的第三电压并且在第一栅电极和第三栅电极的内周表面之间具有不同间隔的绝缘膜的中心部分上。

著录项

  • 公开/公告号KR970071901A

    专利类型

  • 公开/公告日1997-11-07

    原文格式PDF

  • 申请/专利权人 가네꼬 히사시;

    申请/专利号KR19970013955

  • 发明设计人 오카모토 아키히코;

    申请日1997-04-16

  • 分类号H01J9/02;

  • 国家 KR

  • 入库时间 2022-08-22 03:16:11

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