A silicon carbide based MIS structure with high latch-up resistance (SILICON CARBIDE-BASED MIS STRUCTURE WITH HIGH LATCH-UP RESISTANCE)

摘要

The MIS structure can be divided into a drift region 1, a base region 3 disposed on the surface of the drift region 1, n⁺A source electrode S for shorting the base region 3 and the source region 2 and a gate electrode G for controlling the electrical resistance of the channel region 32 through the insulator region 5, ). The base zone (3) is located below the entire source region (2)⁺And is more doped in the channel region 32 within the partial region 33. [