Electrically erasable programmable read only memory with non-uniform dielectric thickness with non-uniform dielectric thickness.

摘要

Electrically erasable programmable read only memory (EEPROM) is provided with an isolation control gate and an insulated floating gate in a trench in a semiconductor body. The dielectric layer is disposed along the sidewalls of the trench to isolate the floating gate from the semiconductor body. The thickness of the dielectric layer along at least one sidewall of the trench is greater than the thickness of the dielectric layer along the other sidewalls of the trench to increase the programming rate due to the high electric field in the gate oxide along the remaining sidewalls.