Semiconductor transistor device structure for e.g. CMOS FET

摘要

The device includes a doped crystalline semiconductor layer e.g. of silicon or germanium, upon which is deposited a further crystalline layer. The dopant contains carbon. The carbon is alloyed with the semiconductor material in a desired ratio at a section of the layer such that a twisting of the active semiconductor layer can be attenuated. The carbon may also be substituted in the crystal structure of the semiconductor material.