HIGH VOLTAGE DEVICES FOR AVOIDING PASSAGE-VS-TYPE FAILURES -VS (THE NEGATIVE POLE OF POWER SUPPLY)

摘要

A drive circuit for high power devices is provided, which includes an integrated circuit driver (20) and a power switching circuit comprising first and second devices (10, 11) driven by MOS gate. intended to be made alternately conductive by the excitation device. The excitation device comprises an external capacitor (Cb, 28) connected between two circuit nodes (Vb) and VS, 38) as well as a common node (36) and a series circuit comprising, between the common node and the node first cited (Vb), a load capacitor (CVCC, 26), a resistor (Rb, 40) and a diode (Db, 22). The MOS gate controlled excitation device and the power supply switching circuit are placed as close as possible to each other to shorten the lengths of the conductors between the first cited node (VS) and the second cited node (Vo) and between the common node and another common node of the supply switching circuit, in order to reduce the inductance values (LS1 and LS2).